Anderson Transition in 3D Systems

Level curvature and metal-insulator transition in 3d Anderson model

The level curvature in the Anderson model on a cubic lattice is numerically investigated as an indicator of the metallic-insulator transition. It is shown that trie mean curvature obeys a scaling law in the whole range of the disorder parameter. In the metallic regime, the distribution of rescaled curvatures is found to be well described by a formula proposed by Zakrzewski and Delande [1] for r...

The Anderson-Mott transition

The interacting disordered electron problem is reviewed with emphasis on the quantum phase transitions that occur in a model system and on the field-theoretic methods used to describe them. An elementary discussion of conservation laws and diffusive dynamics is followed by a detai1ed derivation of the extended nonlinear sigma model, which serves as an effective field theory for the problem. A g...

Conductance fluctuations near Anderson transition

In this paper we report measurements of conductance fluctuations in single crystal samples of Si doped with P and B close to the critical composition of the metal insulator transition (nc ≈ 4 × 10 cm). The measurements show that the noise, which arises from bulk sources, does not diverge as the Ioffe-Regal limit (kF l → 1) is approached from the metallic side. At room temperatures, the magnitud...

Anderson transition in disordered bilayer graphene.

Employing the kernel polynomial method (KPM), we study the electronic properties of the graphene bilayers with Bernal stacking in the presence of diagonal disorder, within the tight-binding approximation and nearest neighbor interactions. The KPM method enables us to calculate local density of states (LDOS) without the need to exactly diagonalize the Hamiltonian. We use the geometrical averagin...

Scaling law and critical exponent for α0 at the 3D Anderson transition